Silica for Tire Industry
        Silica for Feed additive
        Silica for Rubber Industry
        Silica for Silicon Rubber
        Airspay silicon dioxide
        Medicinal Silica
        Toothpaste with silica
        Silica for Food additive
        Sodium Silicate
         More
 
 
  News Center

 

We report the metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO2) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process. The growth was carried out using a CVD system at atmospheric pressure. After high-temperature activation of the growth substrates in air, high-quality polycrystalline graphene is subsequently grown on SiO2 by utilizing the oxygen-based nucleation sites. The growth mechanism is analogous to that of growth for single-walled carbon nanotubes. Graphene-modified SiO2 substrates can be directly used in transparent conducting films and field-effect devices. The carrier mobilities are about 531 cm2 V–1 s–1 in air and 472 cm2 V–1 s–1 in N2, which are close to that of metal-catalyzed polycrystalline graphene. The method avoids the need for either a metal catalyst or a complicated and skilled postgrowth transfer process and is compatible with current silicon processing techniques.

 

 

Copyright(C)2016 , Xinxiang Yellow River Fine Chemical Industry Co., Ltd. All Rights Reserved.  Supported by  LookChem Copyright Notice