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A form-stable paraffin/silicon dioxide (SiO2)/expanded graphite (EG) composite phase change material (PCM) was prepared by sol–gel method. Silica gel acts as the supporting material and EG is used to increase the thermal conductivity. The mass fractions of silicon oxide and graphite are 20.8% and 7.2%, respectively. The composite PCM was characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Fourier transformation infrared spectroscopy (FTIR) method. Thermal properties and thermal stability of the composite PCM were studied using differential scanning calorimetry (DSC). The result shows that paraffin was well dispersed in the network of silica gel and there is no chemical reaction between them. The phase change temperature of the paraffin/SiO2 composite and the paraffin/SiO2/EG composite are 27.53 °C and 27.72 °C, respectively. The latent heat of the paraffin/SiO2 composite and the paraffin/SiO2/EG composite are 112.8 J/g and 104.4 J/g, respectively. The thermal conductivity of the SiO2/paraffin composite and the SiO2/paraffin/EG composite are 28.2% and 94.7% higher than that of paraffin.

Applications reign dispersion polymerization process for preparing the dispersed phase particle size is between about 130nm poly (methyl methacrylate) / silica PMMA / SiO2 nanocomposites, and the performance study by the system of SEM, DMA, TGA and other tests. The results show that, Silicon Dioxide surface treated inorganic filler dispersed uniformly in the composite matrix interfacial bonding well. The  filling amount of SiO2 particles have a greater impact on the thermal stability of the mechanical properties of the matrix, the dynamic mechanical behavior, and optical behavior of tensile strength, elastic modulus, break elongation.

The initial Si–O–Si band at 1140 cm–1 broadens upon ozone exposure, consistent with the formation of a Si–O–Si network that extends the existing Silicon Dioxide substrate. In steady state, the ALD process is characterized by reaction of SiHx by ozone with the formation of OH, thus sustaining the ALD process, with densification of stoichiometric silicon oxide [transverse optical (TO) and longitudinal optical (LO) phonon modes at 1053 and 1226 cm–1].



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