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Finite strain kinematics is invoked to model the large expansion of Silicon Dioxide, dielectrics are modelled as viscoelastic solids and annealing-induced density relaxation of SiO2 is incorporated as a historydependent process. A levelset framework is used to describe the moving Si/Silicon Dioxide interface. Sophisticated finite element methods are employed to solve the mathematical equations posed for each phenomenon. Mechanical properties of viscoelastic solids are extracted directly from stress-strain data, following which, parameters for the diffusion-reaction problem are obtained. Comparison with micro-Raman spectroscopy provides validation of the model. In summary, it took a lot of characterization methods, the modeling was also used. 

The process are following: The processing sequence involves steps such as etching away of material, deposition of new material, diffusion of Oxygen, oxidation, moving interfaces between Silicon and Silicon dioxide, and the mechanics associated with large volume changes, operations should be carried out step by step. Some of these steps are carried out at very high temperature, such as temperatures in the range of 900?C ? 1000?C. Due to the profiles assumed by various materials, their interfaces, the stress generated during the processand residual stress at the end, all affect the electrical characteristics of the device. Additionally, nucleation of dislocations in Silicon lead to catastrophic degeneration of electrical performance. Clearly, accurate modelling of stress is one of the most important thing to prediction of device performance. More tests need to be further investigated. 

Finite strain kinematics has been argued for and applied in modelling the large expansion of Silicon Dioxide. Various experimentally observed phenomena that contribute to the mechanics of the problem have been accounted for in a rigorous manner. The computational methods employed are capabile of calculating the stress at each step of the process. Qualitative and quantitative validation of the models has been presented.


 

 

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