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Physical vapor deposition is mainly divided into evaporation deposition, ion coating and sputtering coating three categories the vacuum evaporation coating technology appear earlier, but this method of deposition film and substrate binding force is not strong. In 1963, the United States of Sandia company D.M.M attox ion plating (IonPlating) technology, first proposed in 1965, IBM developed the rf sputtering in the United States, thus constitutes the three series of PVD technology - evaporation plating, sputtering and ion plating. 

Magnetron sputtering deposition:

Silicon dioxide of rf sputtering targets is one of the main method of preparation of SiO2 thin film. This kind of method of the preparation of SiO2 thin film at low temperature, with porous structure, low density, and poor ability to resist erosion; The preparation of thin films at high temperatures, high density and good performance. So, under normal circumstances, the substrate temperature for 300 ~ 600 ℃. The downside is that lead to devices are susceptible to thermal damage, reduce some performance index. Subsequently developed rf magnetron sputtering technology, can achieve rapid and low temperature requirements, not only make up the disadvantages of rf sputtering, greatly reduce the damage of electron bombardment directly on the surface of a substrate, and can work under low power and air pressure. Insulators and conductors are sputtering, simple technology, low substrate temperature, film thickness uniformity, repeatability and controllability compared with other film preparation method had obvious improvement and improve, thus has been widely used. Many students like to use 140 mm X 600 mm silicon target, frequency of 40 KHZ medium frequency power supply, with Ar as sputtering gas, O2 as the reaction gas, SiO2 thin film was prepared successfully, and the preparation of SiO2 thin film chemical proportioning and elemental chemical state of scanning auger spectrometer (SAM) and X-ray photoelectron spectroscopy (XPS) analysis, tests the membrane layer on blocking properties of sodium (Na +), optical refractive index and visible light transmittance. 

Pulsed laser deposition:

Laser deposition is developed in the late 1980 s new preparation technology of thin film, in the preparation of complex oxides, such as high temperature superconductor, ferroelectric, achieved great success. In recent years, this method has been used for the preparation of silicon silicon and silicon silicide film materials, and structure and the luminescent properties of these materials were studied. With excimer laser, on monocrystalline silicon target reactions in oxygen atmosphere, make the reaction of silica form a thin film deposition on monocrystalline silicon surface, using X-ray photoelectron spectroscopy analysis showed that the formation of thin films are amorphous silicon dioxide component; Was observed by transmission electron microscope (TEM) micron polycrystalline silicon particles.


 

 

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