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It is clearly observed that themeasured stress in the LPCVD Silicon Dioxide films is slightly reduced by ion implantationwhen the projected range is about 15 nm and dramatically reduced with the increment of the projected range. The thickness of all films decreases from about 302 nm to about 232 nm after the first annealing treatment due to the rearrangement of Si―O network, and it does not change significantly after ion implantation and the second annealing treatment. The film stress measured in films implanted with different ions at a dose of 1 × 1015 cm?2 after the second annealing treatment. The projected range in the table is derived from the plot of projected range for common dopants in SiO2.

After ion implantation, the resultant LPCVD Silicon Dioxide films consist of two layers: the implanted layer and the bare layer. For the former, a compressive stress is induced by the atomic collisions that offset the intrinsic tensile stress there. The film stress and the property of implanted layer. It can be seen that the calculated influence of implanted layer stress on the film stress depends linearly on the thickness ratio of the implanted layer to SiO2 film. In other words, the thinner the implanted layer is, the less the film stress modification can be obtained. 

The measured stress in as-deposited and P+-,As+-, and B+-implanted LPCVD Silicon Dioxide films as a function of aging time in a 45% RH atmosphere. The implantation energies are chosen to obtain the same low projected range (about 15 nm), so that the film stress modification is slight. In these plots, the positive and negative stresses indicate the tensile and compressive stresses, respectively. For asdeposited film, the stress continuously decreases from 70 MPa, and a tensile–compressive stress transition appears after 24 h. The compressive stress continues to increase progressively with the increasing aging time. For implanted films, the variation of stress in these films upon aging is weaker than that in as-deposited film, and decreases with increasing implantation dose. Tthe measured stress as a function of aging time for implanted LPCVD Silicon Dioxide films with the same dose. Impurities in SiO2 films have similar distribution profiles, and it is obvious that the variation of stress upon aging strongly depends on the implantation ion types. The As+ ion has a better effect on reducing the variation of stress upon aging than B+ ion, while the effect of P+ ion is the best.



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