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The researchers chose silicon dioxide because of its crystal lattice to produce the desired resonant optical phonon at room temperature, and can achieve a good balance between performance and cost, and can be implemented within the operating temperature range of microelectronic devices common cooling effect, such as the resonant frequency is converted to thermal radiation temperature of silicon dioxide, which is about 50℃.

The cooling effect depends on the agglomeration behavior of silica nanoparticles, research the first time the effects of macro-nano display, a huge demand for energy electronics / equipment provide low-cost, superior cooling capacity.

Why does silicon dioxide have such a high boiling point? The attraction forces or the attraction between the bonds is relatively high as opposed to H2O or water which the bonds aren't as strong giving it a relatively low boiling point.

Silicon dioxide structure:

Tetrahedral arrangement with one silicon bonded to four oxygen atoms.

Most oxygen atoms will be bonded to two silicon atoms, so that two tetrahedra are joined at a corner. (bridging atoms) The orientation can be random, leading to an amorphous structure. Some oxygen atoms will be bonded to only one silicon atom (nonbridging atoms). The relative amounts of bridging to non-bridging determines the “quality” of the oxide. If all oxygen atoms are bridging, then a regular crystal structure results –quartz.

Consumption of the silicon substrate:

In the reaction forming silicon dioxide, silicon atoms at the surface of the wafer must be converted to make the oxide. For a given volume of SiO2 that is formed, a corresponding volume of the silicon substrate is lost. 

In crystalline silicon, each silicon atom corresponds to a volume of 2x10–23 cm3 (= 0.02 nm3). In SiO2, each silicon atom corresponds to a volume of about 4.4x10–23 cm3, depending on the density of the oxide, or about 2.2 times more than the volume in the silicon. 

However, as the silicon dioxide is forming, it cannot expand in all directions equally – it is constrained in the plane of the wafer. So all of the volume difference is taken up by expansion in the vertical direction.


 

 

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