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As countries of the green tires in hot pursuit, in the next five years, the global demand for Silicon dioxide will be an annual rate of 3% annually. In 2014, global consumption of white carbon black to 200 million tons in 2015 to 2.2 million tonnes. Among them, in 2015 Chinese tire industry silica consumption reached 15 million tons in 2020 will surge to 40 million tons, then, Chinese production will reach 2.4 million tons of white carbon black, silica global "hegemony" status will further consolidate.

Degradation of silicon dioxide films is shown to occur primarily near interfaces with contacting metals or semiconductors. This deterioration is shown to be accountable through two mechanisms triggered by electron heating in the oxide conduction band. These mechanisms are trap creation and band‐gap ionization by carriers with energies exceeding 2 and 9 eV with respect to the bottom of the oxide conduction band, respectively. The relationship of band‐gap ionization to defect production and subsequent degradation is emphasized. The dependence of the generated sites on electric field, oxide thickness, temperature, voltage polarity, and processing for each mechanism is discussed. A procedure for separating and studying these two generation modes is also discussed. A unified model from simple kinetic relationships is developed and compared to the experimental results. Destructive breakdown of the oxide is shown to be correlated with ‘‘effective’’ interface softening due to the total defect generation caused by both mechanisms.

This paper presents a spectroscopic study using the techniques of ellipsometry and infrared (IR) absorption spectroscopy of the chemical bonding in silicon dioxide (SiO2) filmsgrown in dry oxygen ambients at temperatures between 550 and 1000?°C. We find that the index of refraction at 632.8 nm increases and the frequency of the dominant IR active bond‐stretching vibration at about 1075 cm? 1 decreases as the growthtemperature is decreased below 1000?°C. 


 

 

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