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In recent years, with the rapid development of Chinese Silicon Dioxide industry, the global production capacity of silica showed rapid growth, as of the end of 2014 the global production capacity of silicon dioxide is about 4.2 million tons, of which nearly 2.5 million tons capacity in China, accounting for the world's total 59.5%. On silica consumption, China is now the world's largest consumer market in silica, the annual consumption of more than one million tons, far more than the United States, Japan and other developed countries.

A detailed study was made of parameter correlation effects involving the optical constants used for the interface layer. The resulting thermal silicon dioxide optical constants were shown to be independent of the precise substrate model used, and were found to be approximately 0.4% higher in index than published values for bulk glasseous silicon dioxide(SiO2). The resulting siliconoptical constants are comparable to previous ellipsometric measurements in the regions of overlap, and are in agreement with long wavelength prismmeasurements and transmission measurements near the band gap.

Here is the study about Silicon Dioxide. The mean escape depths of Si 1s, Si 2p, and O 1s photoelectrons from silicon-silicon dioxide structures were determined over a wide kinetic-energy range with magnesium,aluminum, and chromium x-ray sources. Variations in photoelectron line intensity were measured as a function of oxide film thickness. Film thicknesses were determined from ellipsometric data assuming an index of refraction of 1.47 for the oxide. Discrepancies in fitting intensity data to an escape-depth curve for films <20-10—10 thick are associated with nonstoichiometry of the oxide film near the interface. The incompletely oxidized interfacial region is identified by variations in linewidth and in binding energies of the spectral lines as well as by the deviations from predicted intensity data.



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