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2012 China market Silicon Dioxide production capacity is about 2.04 million tons. 2013,white carbon black production capacity is about 2.2 million tons, precipitated silica production capacity of 2.08 million tons, fumed silica production capacity of 120,000 tons. Upgrading of domestic silica production capacity coming on stream, mainly due to lower demand growth and manufacturers new projects. In 2015 the global demand for silica tires are about 167 tons, is expected in 2020 global demand for silica tires will be 3.31 million tons.

Some experts study the Silicon Dioxide. The spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic `ODCs' (oxygen-deficiency centers), and their Ge-related analogs play a key role in the fiber-optic Bragg grating writing processes. The controversy surrounding the structural models for the Si- and Ge-related ODCs is discussed and the similarity between the bulk and surface point defects in silica is emphasized. The possible interconversion mechanisms between 2-fold-coordinated Si, neutral oxygen vacancies and E′-centers are discussed. The effects of glassy disorder have a profound effect on defect properties and interconversion processes in silica.

Optical constant spectra for silicon and thermally grown silicon dioxide have been simultaneously determined using variable angle of incidence spectroscopicellipsometry from 0.75 to 6.5 eV. Spectroscopic ellipsometric data sets acquired at multiple angles of incidence from seven samples with oxide thicknesses from 2 to 350 nm were analyzed using a self-contained multi-sample technique to obtain Kramers–Kronig consistent optical constant spectra. The investigation used a systematic approach utilizing optical models of increasing complexity in order to investigate the need for fitting the thermal SiO2optical constants and including an interface layer between the silicon and Silicon Dioxide in modeling the data. 


 

 

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